The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 06, 1993
Filed:
Feb. 22, 1991
Applicant:
Inventors:
Assignee:
Kabushiki Kaisha Toshiba, Kawasaki, JP;
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
257368 ; 257401 ; 257409 ;
Abstract
A MOS transistor includes a gate electrode layer formed on an insulation layer which is formed on an element formation region defined by a field insulation layer formed on a P-type semiconductor substrate. The gate electrode layer has first and second openings formed therein. Further, N-type impurity diffusion regions acting as the drain and source of the MOS transistor are formed in those portions of the surface area of the semiconductor substrate which lie under the first and second openings.