The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 06, 1993
Filed:
Dec. 09, 1991
Toshihisa Tsukada, Musashino, JP;
Yoshiyuki Kaneko, Hachioji, JP;
Hideaki Yamamoto, Tokorozawa, JP;
Norio Koike, Suginami, JP;
Ken Tsutsui, Nishitama, JP;
Haruo Matsumaru, Nishitama, JP;
Yasuo Tanaka, Koganei, JP;
Hitachi, Ltd., Tokyo, JP;
Abstract
A thin film phototransistor is provided having a field effect transistor structure where at least one end of the gate electrode is not overlapped with an electrode neighboring the end. Such a thin film phototransistor has: (1) a function as a photosensor and a switching function; (2) a high input impedance; (3) a voltage control function; and (4) a high photocurrent ON/OFF ratio. This thin film phototransistor can be used independently or together with a thin film transistor for picture elements of a one-dimensional or two-dimensional photosensor array, producing satisfactory results.