The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 06, 1993
Filed:
Aug. 07, 1991
Applicant:
Inventors:
Noboru Nakamura, Hirakati, JP;
Hiroyuki Kuriyama, Minoo, JP;
Shinya Tsuda, Yahata, JP;
Shoichi Nakano, Hirakata, JP;
Assignee:
Sanyo Electric Co., Ltd., Osaka, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ; H01L / ;
U.S. Cl.
CPC ...
257570 ; 257 66 ; 257288 ;
Abstract
A semiconductor device including a semiconducting layer made of polycrystalline silicon, an insulating film provided on an upper face of the semiconducting layer and an electrode provided on an upper face of the insulating film such that channels are formed on the upper face of the semiconducting layer, the improvement comprising: a further semiconducting layer made of amorphous silicon, which is provided between the semiconducting layer and the insulating film.