The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 06, 1993
Filed:
Nov. 12, 1991
Donald R Bradbury, Palo Alto, CA (US);
Gary W Ray, Mountain View, CA (US);
Hewlett-Packard Company, Palo Alto, CA (US);
Abstract
A method of forming a plug for electrical connection between two metallic layers on an integrated circuit substrate includes retaining an antinucleation resist layer atop an insulator layer through which the plug is to be formed. After a contact hole is etched through the insulator layer, the antinucleation resist layer is baked. Cleaning of an area exposed by said contact hole in order to minimize contact resistance occurs during a two step process of argon sputter etching and oxygen plasma descumming the exposed area. Because the argon sputter etch and the oxygen plasma descum uncover an annular region about the contact hole, a concentration of phosphorous within the insulator layer and a low temperature selective deposition are used to reduce the occurrence of unwanted nucleation. After selective deposition, the antinucleation resist layer is stripped and an upper metallic layer is formed.