The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 06, 1993
Filed:
Jun. 06, 1991
Philippe Collot, Orsay, FR;
Paul Schmidt, Bourg la Reine, FR;
Thomson-CSF, Puteaux, FR;
Abstract
Disclosed is a method for making self-aligned metal contacts on semiconductor devices, with a submicronic spacing between regions controlled by the contacts. On a semiconductor body supporting at least one raised pattern, a double layer of SiO.sub.2 and Si.sub.3 N.sub.4 is deposited by an isotropic method. A double ionic etching of Si.sub.3 N.sub.4 by SF.sub.6 and of SiO.sub.2 by CHF.sub.3 is done to insulate the sidewalls on the flanks of the pattern. A sub-etching by HF/NH.sub.4 F/H.sub.2 O creates a cap beneath each sidewall. The metal contacts, deposited by evaporation, are self-aligned and separated by a space 'd' equal to the thickness of the insulating layers.