The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 06, 1993
Filed:
Feb. 14, 1991
Applicant:
Inventors:
Jia-Tarng Wang, Cupertino, CA (US);
Robert T Haraga, San Jose, CA (US);
Wadie N Khadder, Sunnyvale, CA (US);
Assignee:
Linear Technology Corporation, Milpitas, CA (US);
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
437 31 ; 437 32 ; 437225 ; 437228 ; 437 34 ; 148D / ; 148D / ;
Abstract
A method is provided for use with an integrated circuit which includes a npn bipolar transistor on which a variable thickness oxide layer has been formed, the method for improving the radiation hardness of the transistor comprising the steps of: removing the variable thickness oxide layer; and forming a new oxide layer on the transistor, the new oxide layer having less overall volume than the removed variable thickness oxide layer.