The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 06, 1993

Filed:

Jan. 10, 1992
Applicant:
Inventors:

Peter K Bachmann, Aachen, DE;

Hans Lydtin, Stolberg, DE;

Arnd Ritz, Huckelhoven, DE;

Assignee:

U.S. Philips Corporation, New York, NY (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
B05D / ; C23C / ;
U.S. Cl.
CPC ...
427573 ; 427249 ; 427122 ; 427314 ; 427577 ; 427575 ; 423446 ; 428408 ;
Abstract

Method of manufacturing polycrystalline diamond layers, in which diamond crystallites are deposited by means of Chemical Vapour Deposition (CVD) on a substrate heated to a temperature ranging between 450.degree. and 1200.degree. C. from a gas phase comprising hydrogen and .ltoreq.30% of a carbon-containing gas at a pressure ranging between 10.sup.-5 and 1 bar, in which method the substrate is contacted with a gas phase having an energy content which varies in time, such that at least at the start of the deposition process the substrate is in contact with a gas phase having an energy content which is suitable for nucleating diamond crystallites in the gas phase, whereafter the substrate is contacted with a gas phase having an energy content which is increased with respect to the content at the start of the process and further diamond crystallites are formed in situ on the substrate surface nucleated with diamond crystallites formed in the gas phase.


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