The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 30, 1993
Filed:
Aug. 07, 1991
Applicant:
Inventors:
Jammy C Huang, Andover, MA (US);
Mordechai Rothschild, Newton, MA (US);
Barry E Burke, Lexington, MA (US);
Daniel J Ehrlich, Lexington, MA (US);
Bernard B Kosicki, Acton, MA (US);
Assignee:
Massachusetts Institute of Technology, Cambridge, MA (US);
Primary Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ; H01L / ;
U.S. Cl.
CPC ...
257219 ; 257222 ; 257440 ; 257436 ; 257447 ; 257460 ; 257464 ; 257463 ; 257655 ;
Abstract
A surface electron barrier region is formed on a semiconductor membrane device by a single step laser process which produces a sharp doping profile in a surface region above the light penetration depth. Enhanced quantum efficiency is observed, and by selectively forming barrier layers of differing depth, a CCD device architecture for two-color sensitivity is achieved. The barrier layer results in enhanced membrane-type and radiation hardened bipolar and CMOS devices.