The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 30, 1993
Filed:
Jul. 30, 1992
Applicant:
Inventors:
Kazuhiro Tsuchiya, Kanagawa, JP;
Yutaka Yoshida, Kanagawa, JP;
Assignee:
Fuji Electric Co., Ltd., Kanagawa, JP;
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ; H01L / ;
U.S. Cl.
CPC ...
257144 ; 257212 ; 257380 ;
Abstract
A semiconductive device of the type including a conductivity-modulated field-effect transistor provides all of the three electrodes on the principal surface by use of a buried layer and a variety of means for restricting device current to flow through the buried layer. Some of the arrangements not only overcome some effects of parasitic transistors that are formed, but obtain faster turn-on and turn-off while retaining the desired current capacity of the device. The arrangements include means for stopping the lateral spread of a depletion region, a minority carrier suppression region, and drain wall arrangements, among others.