The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 30, 1993
Filed:
Nov. 13, 1991
Kimitaka Yoshimura, Yokohama, JP;
Kabushiki Kaisha Toshiba, Kawasaki, JP;
Abstract
A semiconductor laser device having: a substrate of a first conductivity type; a first clad layer of the first conductivity type formed on the substrate; an active layer formed on the first clad, the active layer being of either one of the first conductivity type and a second conductivity type opposite to the first conductivity type; a second clad layer of the second conductivity type formed on the active layer; a current block layer of the first conductivity type formed on the second clad layer; and an ohmic layer of the second conductivity type formed on the current block layer, wherein the end portion of the ohmic layer covers the side face of the second clad layer at least to some depth, at a pair of side faces of the semiconductor laser device of a double hetero type having a crystal cleavage face at least at a pair of faces substantially perpendicular to the faces of the substrate.