The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 30, 1993
Filed:
Apr. 22, 1988
INMOS Limited, Bristol, GB;
Abstract
A method of fabricating a polycide semiconductor element in which a lift-off mask is formed on a first region of a layer of polysilicon. A first dopant is implanted into second regions of the polysilicon which are adjacent the first region, the first region being masked from implantation by the lift-off mask. A layer of silicide is forced over the implanted regions and the lift-off mask and then the lift-off mask and the respective part of the layer of silicide which is deposited thereover are removed thereby to expose the first region. The method may be used to fabricate a resistive device in a polycide semiconductor element. There is also disclosed a semiconductor element, e.g. a resistive device, made by the method.