The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 23, 1993
Filed:
Aug. 20, 1990
Takao Akaogi, Inagi, JP;
Mitsuo Higuchi, Nakamachi, JP;
Fujitsu Limited, Kanagawa, JP;
Abstract
A semiconductor memory device includes a memory cell array, a data readout circuit, a decoder circuit and an address transition detecting circuit which detects an address transition of an input address signal and which generates an address transition detection pulse. A redundancy circuit determines whether or not the input address signal indicates a defective memory cell and outputs a redundancy signal to the decoder so that the decoder selects one redundant memory cell in place of the specified defective memory cell. A pulse generator generates a pulse signal having a pulse duration time sufficient to reset the memory cell array and the data readout circuit before reading data from the memory cell array in a case where the redundancy circuit outputs the redundancy signal. The pulse duration time of the pulse signal starts from a time when the address transition detecting circuit generates the address transition signal.