The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 23, 1993

Filed:

Apr. 04, 1991
Applicant:
Inventors:

Bo S Andersson, Sundbyberg, SE;

Hans T Lind, Stockholm, SE;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ; H01L / ;
U.S. Cl.
CPC ...
257489 ; 257288 ; 257505 ; 257532 ; 257538 ; 257539 ; 257565 ;
Abstract

An integrated semiconductor circuit includes a substrate, an epitaxial layer having transistor base regions, a first and a second (11) insulating oxide layer, and a protective layer. The first oxide layer carries heavily doped polycrystalline layers, including an electric contact layer, a screening layer and a connecting layer. The connecting layer electrically connects the screening layer to the epitaxial layer, through the electric contact layer. The screening layer prevents the occurrence of inversion and parasite components in the epitaxial layer between the base regions. The polycrystalline layer arrangement is simple and can be produced in a common process step. The arrangement is able to withstand high temperatures and enables the second insulating layer to be readily applied.


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