The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 16, 1993
Filed:
Dec. 16, 1991
William K McDonald, Plano, TX (US);
Texas Instruments Incorporated, Dallas, TX (US);
Abstract
A first polysilicon layer (18) is initially deposited onto a layer of field oxide (16). A dielectric (26) is formed on a portion of the first polysilicon layer (18). A second polysilicon layer (28) is deposited over the dielectric (26) and the first polysilicon layer (18). After the selective deposition of a mask (30) on to the second polysilicon layer (28), the polysilicon layers (18, 28) are anistropically etched to form a polysilicon to polysilicon capacitor (34) and a contact (36) of the capacitor (34). The dielectric (26) functions as an insulator for the capacitor (34) and as a barrier during anisotropic etching for protecting the underlying polysilicon layer (18).