Structure of solid-state image sensing devices

Abstract

A structure of a solid-state image sensing device applicable to an HDVS is disclosed in which at least one of the transmission paths for the drive pulses used for driving vertical registers and horizontal registers can achieve reduced propagation delays and signal distortions of the drive pulses. In the first preferred embodiment, a control gate for controlling the transfer of signal charges between the horizontal registers is constituted by a first polycrystalline silicon layer, a metal wiring layer is formed and is connected to the first polycrystalline silicon layer via contact regions and transfer electrodes provided for driving the horizontal registers are constituted by second and third semiconductor layers placed between the first polycrystalline silicon layer and the metal wiring layer without contacting the contact regions. In the second preferred embodiment, the control gate is formed of a wiring layer placed above the semiconductor layers constituting the transfer electrodes of the horizontal registers. In the third preferred embodiment, shunt wiring films are formed independently on the transfer electrodes for the vertical registers of an image portion and on the transfer electrodes for those of a storage portion.