The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 16, 1993
Filed:
Mar. 19, 1991
Applicant:
Inventor:
Yoshiki Nagatomo, Tokyo, JP;
Assignee:
Oki Electric Industry Co. Ltd., Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
437192 ; 437193 ; 437200 ; 437 46 ;
Abstract
A method of manufacturing a low resistance contact structure for a semiconductor device wherein a polycide layer is formed on a semiconductor substrate, and the surface of the substrate is covered with an interlayer isolation layer which is provided with a contact hole over the polycide layer. After filling the contact hole with polycrystalline silicon or forming a polycrystalline silicon contact or a polycide structure contact which connects to the polycide layer at the contact hole, the structure is subjected to a short term and high temperature annealing treatment at a temperature over 900.degree. C.