The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 16, 1993
Filed:
Aug. 08, 1991
Applicant:
Inventors:
Naomichi Abe, Tokyo, JP;
Takushi Motoyama, Kawasaki, JP;
Assignee:
Fujitsu Limited, Kanagawa, JP;
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G03C / ; G03C / ;
U.S. Cl.
CPC ...
430325 ; 430286 ; 430287 ; 430197 ;
Abstract
Process for the formation of resist patterns in a single layer resist process and a two layer resist process comprising using a resist material prepared from a silicon-containing polymer and an addition agent which can bond to said polymer upon an addition reaction when said resist material is exposed to a patterning radiation, and developing an exposed layer of said resist material with the down flow etching. The resulting resist patterns can be advantageously used in the production of LSIs, VLSIs and other devices.