The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 09, 1993
Filed:
Sep. 24, 1991
Applicant:
Inventor:
Makoto Hosokawa, Kanagawa, JP;
Assignee:
Semiconductor Energy Laboratory Co., Ltd., Kanagawa, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
257 51 ; 136258 ; 136261 ; 257 53 ; 257447 ; 257460 ; 257458 ; 257461 ;
Abstract
A polycrystalline semiconductor device and a method of manufacturing the device are disclosed. An amorphous semiconductor film is deposited on a glass substrate and given thermal treatment at a crystallization temperature of 600.degree. C. or lower to form a polycrystalline photoconductive strucutre. The substrate is made from a material having the property of contracting at a percentage different than the semiconductor film by 10% or less, the contraction being caused by the thermal treatment.