The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 09, 1993
Filed:
Jul. 11, 1991
Applicant:
Inventor:
Ichiro Yoshii, Tokyo, JP;
Assignee:
Kabushiki Kaisha Toshiba, Kawasaki, JP;
Primary Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ; H01L / ; H01L / ;
U.S. Cl.
CPC ...
257774 ; 357 59 ; 257734 ; 257213 ;
Abstract
A semiconductor integrated circuit device formed on the basis of the design rules of 0.5 .mu.m or less contains a MOS transistor. The MOS transistor is formed at the main surface region of the semiconductor substrate. If the effective gate area of the MOS transistor is S2 and the area of a contact hole made in an interlayer insulating film on the gate electrode of the MOS transistor is S1, the relationship expressed as S1/S2.ltoreq.1.8 is established. The contact hole is made by RIE techniques.
Yoshii, Ichiro. (1993). Semiconductor integrated circuit device produced by charged-particle (U.S. Patent No. 5192988). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/5192988
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile