The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 09, 1993
Filed:
Feb. 20, 1991
Yusuke Harada, Tokyo, JP;
Oki Electric Industry Co., Ltd., Tokyo, JP;
Abstract
A method of manufacturing a semiconductor device comprises the steps of preparing a semiconductor substrate, forming a field oxide layer for isolation between active areas, forming a diffusion layer in a surface of the semiconductor substrate, depositing a first insulating interlayer on the semiconductor substrate, forming a W-polycide layer including As on the first insulating interlayer selectively, depositing a second insulating interlayer on the first insulating interlayer and on the W-polycide layer, forming a first contact hole with a shallow depth on the W-polycide layer and a second contact hole with a deep depth on the diffusion layer, depositing a W layer in only the second contact hole by selective CVD so as not to form a step with the second insulating interlayer and, contacting the W-layer and the polycide layer by forming a wiring layer on the surface of the second insulating layer.