The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 09, 1993
Filed:
Jun. 02, 1989
Applicant:
Inventors:
Assignee:
Canon Kabushiki Kaisha, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
437 81 ; 437 89 ; 437103 ;
Abstract
A method for producing a semiconductor device containing steps of forming a stepped pattern on the surface of a semiconductor substrate and forming a gaseous grown crystal layer thereon, which comprises positioning an alignment pattern (for example 6c) included in the first-mentioned pattern diagonally with respect to an in-plane direction of faster pattern growth in said gaseous crystal growth.