Method and apparatus for forming thin film

Abstract

Method of forming a thin film on a substrate by CVD (Chemical Vapor Deposition) method and an apparatus therefor, wherein a first gas is supplied from a reaction gas supply port in a reaction chamber, and an active species produced by exciting a second gas are supplied from an active species supply port in the reaction chamber, and a thin film is formed on the substrate by reaction of the first reaction gas and the active species, since a metal porous plate having a number of small holes is installed close to the substrate between the active species supply port and a heater so as to enclose at least the substrate and the active species supply port, the precursor forming reaction is limited to position on the surface of the substrate and diffusion of the precursor to the outer circumferential portion and the inner wall of the reaction chamber is prevented, thereby the low dust producing process to advance the thin film forming reaction is obtained without generating the reaction product of fine particle form which may cause the dust producing.