The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 02, 1993
Filed:
Aug. 23, 1991
Katuhiko Takebe, Tokyo, JP;
Honda Giken Kogyo Kabushiki Kaisha, Tokyo, JP;
Abstract
A semiconductor sensor for detecting physical quantities such as pressure, acceleration, mechanical vibration, etc. includes a semiconductor substrate, and a field-effect transistor on the semiconductor substrate, the field-effect transistor having a source, a drain, and a gate. A gate voltage is between the source and the gate to cause a drain current between the source and the drain, the drain current being variable with an external force applied to the field-effect transistor, whereby the external force can be detected on the basis of a change in the drain current. The drain current which flows when no external force is applied to the field-effect transistor is selected to be 1/3 or less of a drain current which flows when the gate and the source are shorted, or to be in the vicinity of a value that maximizes the ratio of a change in the drain current which flows when the external force is applied to the field-effect transistor to a change in the drain current which flows when no external force is applied to the field-effect transistor.