The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 02, 1993
Filed:
Jan. 28, 1992
Takahiro Hara, Tokyo, JP;
NEC Corporation, Tokyo, JP;
Abstract
A node potential V1 which is obtained by the division of an internal reference potential and a substrate potential and another node potential V2 which is obtained by the division of the internal reference potential and the ground potential are compared with each other by a current-mirror amplifier. The initial setting of the above two node potentials (V1 and V2) is made as V1>V2. When the substrate potential becomes large in its absolute value, the node potential V1 falls following such change and, when it reaches a predetermined substrate potential, the potentials result in V1<V2. Then, a true output node of the current-mirror amplifier outputs an output of a largely inverted output level which is further amplified by at least one inverter. The semiconductor integrated circuit device is capable of detecting the predetermined substrate potential even if there exist variations in the threshold values in MOS transistors concerned in the fabricating process.