The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 23, 1993
Filed:
Sep. 09, 1991
Applicant:
Inventor:
Jeff M Huard, Puyallup, WA (US);
Assignee:
National Semiconductor Corporation, Santa Clara, CA (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G11C / ; G11C / ; G11C / ;
U.S. Cl.
CPC ...
365154 ; 365156 ; 365177 ; 365179 ; 3652256 ; 36523006 ;
Abstract
A multi-port memory cell utilizes a storage cell to define complementary data storage nodes. Each read port of the memory cell includes two FETs respectively coupled between one of a pair of complementary data-out lines and a read enable line to isolate the read ports. Each of the gates of the two read port FETs is connected to one of the corresponding data storage nodes. The storage cell is read by pulling current from the read enable line and monitoring the difference between the complementary data-out lines.