The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 23, 1993
Filed:
Jan. 30, 1992
Applicant:
Inventors:
Satoshi Nakayama, Kanagawa, JP;
Tetsushi Sakai, Kanagawa, JP;
Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ; H01L / ; H01L / ;
U.S. Cl.
CPC ...
257422 ; 257756 ; 257914 ;
Abstract
A semiconductor device of a MOS structure having a p-type gate electrode has a gate electrode including at least two layers consisting of a boron-doped polysilicon layer and a polysilicon layer doped with boron and an inert material. This inert material is nitrogen or carbon.
Quick Actions:
Nakayama, Satoshi. (1993). Semiconductor device of mos structure having p-type gate electrode (U.S. Patent No. 5189504). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/5189504
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile