The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 09, 1993
Filed:
Apr. 01, 1992
Kabushiki Kaisha Toshiba, Kawasaki, JP;
Abstract
A high-speed semiconductor integrated circuit device has a main circuit section formed on a substrate, and a capacitance section formed on the substrate to surround the main circuit section. The capacitance section is made up of two conductive layers, an upper layer being insulatively disposed above a lower layer. These layers are applied with a power source voltage and a ground voltage, respectively. High-speed signal lines insulatively traverse the capacitance section and are connected to the main circuit section. The capacitance section is disconnected in the region where each signal transmission line passes, and defines a micro-strip type signal transmission line path structure. A 'ladder'-shaped connection pattern is provided at each disconnected portion of the capacitance section, for electrically connecting a conductive layer arranged on one side of the disconnected portion to the corresponding layer arranged on the other side of the disconnected portion. The ladder-shaped connection pattern includes first and second parallel connection portions which extend at right angles to their corresponding signal transmission line. The impedance of the signal transmission line can be controlled by altering the horizontal pattern of the connection portions.