The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 09, 1993
Filed:
Jun. 17, 1991
Joseph E Farb, Riverside, CA (US);
Mei Li, Mission Veijo, CA (US);
Chen-Chi P Chang, Newport Beach, CA (US);
Maw-Rong Chin, Huntington Beach, CA (US);
Hughes Aircraft Company, Los Angeles, CA (US);
Abstract
Complimentary metal oxide silicon transistors fabricated on silicon-on-insulator substrates are configured to allow separately controllable and independent backgate bias for adjacent complimentary devices on the same substrate. By means of deep implantation of boron, a backgate bias P- well (26,126) is positioned on the N-substrate (17,117) at a front surface of the N- substrate behind the N channel transistor of a complimentary pair. The backgate bias P- well (26,126) is provided with an electrical contact (48,148) at the front of the device, as is the N- silicon substrate to enable independent application of separate bias voltage of different polarities and appropriate magnitude.