The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 09, 1993
Filed:
Aug. 01, 1990
Toshitaka Aoyagi, Itami, JP;
Kimio Shigihara, Itami, JP;
Mitsubishi Denki Kabushiki Kaisha, Tokyo, JP;
Abstract
A method of selectively coating one of two spaced apart facets of respective light-emitting regions on the same surface of a semiconductor device formed in a semiconductor wafer includes forming at least one first groove in a wafer and forming at least one second groove in the wafer intersecting the first groove, exposing light-emitting region facets on a side wall surface of the second groove. A stream of an evaporated coating material is directed across an edge, formed by the intersection of a side wall surface of the second groove with the first groove, at an angle relative to the wafer surface so that the edge shadows one of the light-emitting region facets but not the other. After the coating process, the wafer is divided into individual devices that may include adjacent, differently coated light-emitting region facets. The invention avoids a mechanical mask alignment step by employing in the coating process first grooves that are self aligning relative to the light-emitting region facets.