Process for producing laminated semiconductor substrate

Abstract

A process for producing a laminated semiconductor comprising the steps of: providing a structure comprising a first insulating film on a single crystal semiconductor substrate, the first insulating film having a plurality of openings, and a second insulating film having a predetermined width on a perpendicular bisector of a line connecting adjacent openings of the plurality of openings; growing a single crystal semiconductor layer on the first and second insulating layers by a lateral epitaxial growth through the use of the single crystal semiconductor substrate at portions exposed at the openings as a seed crystal; subjecting the single crystal semiconductor substrate to etching back or polishing parallel to the surface of the single crystal semiconductor substrate to expose the second insulating layer; and optionally selectively insulating the single crystal semiconductor layer in the opening to isolate the single crystal semiconductor layer from the single crystal semiconductor substrate. The process obtains a single crystal semiconductor layer not having a polycrystal region.