The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 09, 1993
Filed:
Oct. 24, 1990
Electronics and Telecommunications Research Institute, Chungnam, KR;
Abstract
A DRAM cell of a stack structure having a cup-shaped polysilicon storage electrode for being applied to a 16 mega and 64 mega DRAM wherein a transfer transistor is firstly manufactured, a bit line is formed, an oxide film grid is formed between the cell and cell in the minimum design rule, and upon completing this, the polysilicon storage electrode is formed into a single or double cup shape, whereby the capacitor area is remarkably increased when compared with the conventional stacked structure DRAM cell so that the area efficiency is greatly increased and the process can be executed by such a mask number as the prior stacked structure mask layer number and the structure thereof is simple.