The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 09, 1993
Filed:
Aug. 15, 1991
Applicant:
Inventors:
Mau C Chang, Thousand Oaks, CA (US);
Peter M Asbeck, San Diego, CA (US);
Assignee:
Rockwell International Corporation, Seal Beach, CA (US);
Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ;
U.S. Cl.
CPC ...
437 22 ; 437 31 ; 437 80 ; 437944 ; 357 16 ; 357 34 ; 257198 ; 257523 ;
Abstract
Heterojunction bipolar transistor is formed by using a common photoresist mask for self-aligning all critical dimensions including emitter and emitter contact to base contact to proton damaged collector regions beneath base contact and to passivate emitter periphery at same time.