The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 02, 1993
Filed:
Jan. 24, 1991
Teruyoshi Mihara, Yokosuka, JP;
Tsutomu Matsushita, Yokohama, JP;
Kenji Yao, Yokohama, JP;
Masakatsu Hoshi, Yokosuka, JP;
Yutaka Enokido, Yokosuka, JP;
Yukitsugu Hirota, Kamakura, JP;
Nissan Motor Co., Ltd., Yokohama, JP;
Abstract
A semiconductor device in which the breakdown voltages of the cell unit and the guard ring can easily be matched, and the surge endurance of the device can be improved. This semiconductor device includes a guard ring region surrounding the cell diffusion layers which is formed from an array of a plurality of guard ring cells, where each of the guard ring cells is identical to each of the cell diffusion layers and the guard ring cells are electrically connected mutually, so that the diffusion depths of each of the cells of the guard ring region and the cell diffusion layers are identical, and consequently the breakdown voltages for the guard ring region and the cell diffusion layers can be made equal to each other.