The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 02, 1993
Filed:
Dec. 30, 1991
Applicant:
Inventor:
Kanetake Takasaki, Tokyo, JP;
Assignee:
Fujitsu Limited, Kawasaki, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ; H01L / ;
U.S. Cl.
CPC ...
437132 ; 148 334 ; 148 335 ; 148D / ; 437107 ;
Abstract
A semiconductor device is produced by forming a crystalline substrate of a first layer of Si and a second layer of GaAs or GaAs-containing compound formed on the first layer, wherein a Ge or Ge-containing crystalline layer is formed as an intervening layer between the second layer and the first layer.
Takasaki, Kanetake. (1993). Method of producing a semiconductor device (U.S. Patent No. 5183778). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/5183778
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile