The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 02, 1993

Filed:

Jul. 15, 1991
Applicant:
Inventors:

Shuichi Kameyama, Itami, JP;

Hiroshi Shimomura, Osaka, JP;

Kazuya Kikuchi, Osaka, JP;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
437 26 ; 437 31 ; 437 35 ; 437 80 ; 148D / ; 148D / ;
Abstract

A first semiconductor region is of a first conduction type and forms a transistor collector. A second semiconductor region is of a second conduction type and forms a transistor base. The second semiconductor region extends in the first semiconductor region. A third semiconductor region is of the first conduction type and forms a transistor emitter. The third semiconductor region extends in the second semiconductor region. A fourth semiconductor region is of the first conduction type and has a first portion and a second portion. The first portion extends in a part of the first semiconductor region below an edge of the third semiconductor region, and the second portion extends from the first semiconductor region into a part of the second semiconductor region outward of the edge of the third semiconductor region to limit a width of the transistor base.


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