The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 26, 1993
Filed:
Sep. 28, 1990
Applicant:
Inventor:
Takayuki Matsukawa, Hyogo, JP;
Assignee:
Mitsubishi Denki Kabushiki Kaisha, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
437 72 ; 437 73 ;
Abstract
MOS transistors connected to each other are electrically isolated at both ends of a transfer gate by an LOCOS oxide film, and the bottom surface in a trenched capacitor portion and the side wall of a trench between adjacent capacitors are electrically isolated. A leakage current can be reduced, so that a semiconductor device comprising a capacitor having a reduced occupied area and large capacitance can be obtained.
Matsukawa, Takayuki. (1993). Semiconductor device and method for manufacturing the same (U.S. Patent No. 5182227). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/5182227
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile