The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 26, 1993
Filed:
Jan. 16, 1991
Applicant:
Inventors:
Jae W Kim, Seoul, KR;
In S Chung, Ichon-Uep, KR;
Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
437 52 ; 437 47 ; 437 48 ; 437 60 ; 437160 ; 437164 ; 437228 ; 437919 ;
Abstract
A SDHT structured DRAM Cell with a P type silicon substrate and a P well region with a first trench formed into the P well region and a CVD oxide film layer formed on the wall of the first trench is disclosed. A second trench is formed in the bottom of the first trench. A capacitive oxide film layer is formed on the CVD oxide film layer of the first trench and on the second trench with a conducting material filling the trenches to form an inside charge storage electrode. A N MOSFET is formed on the P well region near the first trench with the N MOSFET having a soure N+ region and a drain N+ region, each including a LDD region.