The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 26, 1993
Filed:
Feb. 20, 1992
Applicant:
Inventor:
Mitsuaki Fujihira, Yokohama, JP;
Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
437 22 ; 437 41 ; 437 44 ; 437912 ; 437944 ; 148D / ; 257282 ;
Abstract
The present invention relates to a method of making a compound semiconductor device having a high performance self-aligned LDD structure which has stable characteristics, and is suitable for high integration and high yield, in which after forming a channel layer beneath the substrate surface, using a high performed self-aligned technology, a gate electrode, lightly doped layers and heavily doped layers are formed in predetermined positions by a photolithography for the gate portion. This process of a photolithography is performed only once, therefore, each pattern can be formed with excellent accuracy and reproducibility.