The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 19, 1993
Filed:
May. 08, 1991
Applicant:
Inventors:
Yuuichi Mikata, Kawasaki, JP;
Toshiro Usami, Yokohama, JP;
Assignee:
Kabushiki Kaisha Toshiba, Kawasaki, JP;
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
257331 ; 257332 ; 257334 ;
Abstract
An MOS FET of the semiconductor device includes a semiconductor substrate on which a projection is formed via a given film. The projection is made of a polysilicon having grain boundaries. A pair of gate electrodes are provided so that one of the gate electrodes faces the other thereof via side walls of the projection and gate oxide films. A conductive channel forming area is formed at the side walls of the projection, so that the extending direction of the channel is parallel to the thickness direction of the substrate.