The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 19, 1993
Filed:
Sep. 05, 1991
Ulrich Bommer, Eppingen-Rohrbach, DE;
Werner Schairer, Weinsberg, DE;
Telefunken electronic GmbH, Heilbronn, DE;
Abstract
The invention relates to a semiconductor arrangement used in particular for the manufacture of infrared-emitting diodes. A first Si-doped GaAlAs layer containing an n-conductivity zone and a p-conductivity zone is deposited onto an n-doped GaAs semiconductor substrate. The Al content decreases continuously over the thickness of the layer. A second GaAlAs layer is deposited on the p-conductivity first zone of the first GaAlAs layer. The Al concentration of the second layer at the barrier surface with the first layer is greater than the Al concentration of the first GaAlAs layer at the barrier surface with the substrate and decreases continuously with the thickness of the second layer. The curve of the Al concentrations in the two epitaxial layers permits a light guiding effect so that the emitted radiation can, unlike conventional GaAlAs diodes, be output preferably onto those sides of the semiconductor array oriented vertically or perpendicularly to the substrate. With this measure, the semiconductor substrate does not have to be removed for the manufacture of infrared-emitting diodes.