The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 12, 1993

Filed:

May. 21, 1992
Applicant:
Inventor:

Nobuhiko Ito, Tenri, JP;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H03K / ; H03K / ;
U.S. Cl.
CPC ...
3072962 ; 3072966 ; 307578 ; 307583 ; 307585 ; 307264 ; 307607 ;
Abstract

A charge pump circuit having a pumping capacitor is provided. A first terminal of the pumping capacitor is connected to a V.sub.CC power source through a P-MOS transistor, and grounded via an N-MOS transistor. The gates of these transistors receive a signal in which the HIGH level and the LOW level are alternately repeated. A second terminal of the pumping capacitor is grounded via an N-MOS transistor. The gate of the N-MOS transistor is connected to a terminal through a capacitor, and also to the second terminal of the pumping capacitor via an N-MOS transistor the gate of which is grounded. The second terminal is connected to an external circuit through an N-MOS transistor. The gate of the N-MOS transistor is connected to a terminal through a capacitor, and also to the output terminal through an N-MOS transistor the gate of which is connected to the node.


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Ito, Nobuhiko. (1993). Charge pump substrate bias circuit (U.S. Patent No. 5179296). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/5179296

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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