The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 12, 1993
Filed:
Oct. 08, 1991
J Keith Hartman, Albuquerque, NM (US);
Carroll B McCampbell, Albuquerque, NM (US);
SCB Technologies, Inc., Albuquerque, NM (US);
Abstract
A semiconductor bridge comprises a substrate of non-electrically conductive material, a doped semiconductor layer on the substrate, as well as first and second metal lands forming ohmic contacts on the doped semiconductor layer. An explosive charge bridges a gap between the metal lands across the doped semiconductor layer. The lands, gap, semiconductor layer, and charge are dimensioned and arranged so that in response to a current equal to or in excess of a predetermined level having a duration equal to or in excess of a predetermined value being applied across the gap, a plasma having sufficient energy to energize the explosive is formed in the gap. The predetermined current has a predetermined minimum firing voltage associated with it. The semiconductor bridge is one of a lot having a firing voltage standard deviation of about 0.05 volts. Premature energization of the explosive by electrostatic discharge and voltages greater than the firing voltage and by AC induced voltages is prevented by connecting a zener diode across the first and second lands. The zener diode is chosen to conduct in the backward direction in response to a positive voltage of about 1.1 times the predetermined minimum firing voltage being applied across it.