The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 12, 1993

Filed:

Nov. 20, 1991
Applicant:
Inventors:

Hideji Numata, Takasago, JP;

Takuro Ono, Yokohama, JP;

Nobuo Kageyama, Takasago, JP;

Koji Furukawa, Takasago, JP;

Ryuhei Makimura, Toyama, JP;

Assignees:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
C04B / ;
U.S. Cl.
CPC ...
501 88 ; 264 60 ;
Abstract

High purity silicon carbide parts for a heat treating apparatuses for semiconductors; composed mainly of .alpha.-type silicon carbide and silicon; characterized in that a particle sizes of the .alpha.-type silicon carbide crystals composing the high purity silicon carbide parts are not larger than 44 .mu.m; a weight mean particle size of the .alpha.-type silicon carbide crystals is in a range from 2 to 25 .mu.m; high purity silicon is filled up among the particles of the .alpha.-type silicon carbide crystals; and a content of iron as an impurity element contained in the high purity silicon carbide parts is not larger than 5 ppm.


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