The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 05, 1993
Filed:
Jun. 17, 1991
Mari Tsugami, Itami, JP;
Mitsubishi Denki Kabushiki Kaisha, Tokyo, JP;
Abstract
A semiconductor laser producing visible light includes a first conductivity type semiconductor substrate, a first conductivity type AlGaInP cladding layer containing a first dopant impurity and disposed on the substrate, a semiconductor first spacer layer disposed on the cladding layer, an undoped InGaP active layer disposed on the first spacer layer wherein the first spacer layer inhibits intrusion of the first dopant impurity into the active layer, a semiconductor second spacer layer disposed on the active layer, a second conductivity type AlGaInP light guide layer containing a second dopant impurity and disposed on the active layer wherein the second spacer layer inhibits intrusion of the second dopant impurity into the active layer, a second conductivity type semiconductor current concentration and collection structure disposed on the light guide layer, and first and second electrodes disposed on the substrate and the current concentration and collection structure, respectively.