The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 05, 1993
Filed:
Oct. 23, 1989
Shinichi Satoh, Hyogo, JP;
Wataru Wakamiya, Hyogo, JP;
Takahisa Eimori, Hyogo, JP;
Hiroji Ozaki, Hyogo, JP;
Yoshinori Tanaka, Hyogo, JP;
Mitsubishi Denki Kabushiki Kaisha, Tokyo, JP;
Abstract
Disclosed is an LDDMOSFET, in which a gate electrode (2) having a cross-sectional shape having a lower side and an upper side longer than the upper side is formed of only conductive materials, and diffusion layers (5b, 6b) of low concentration and high concentration constituting a drain are both formed so as to be overlapped with portions below the gate electrode (2) utilizing the shape of this gate electrode (2). Since the gate electrode (2) is formed of only the conductive materials, it becomes easy to word the gate electrode (2) so as to be in a desired shape. Since the diffusion layers (5b, 6b) of low concentration and high concentration constituting the drain are both overlapped with the portions below the gate electrode (2), the performance as a transistor is not degraded even if the polarity of the surface of the diffusion layer (5b, 6b) of low concentration is inverted by the effect of hot electrons.