The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 22, 1992
Filed:
Feb. 20, 1991
Masamichi Yamanishi, Hiroshima, JP;
Hitoshi Oda, Sagamihara, JP;
Canon Kabushiki Kaisha, Tokyo, JP;
Abstract
There is provided a magnetooptic device including a substrate; a semiconductor layer having a quantum well structure formed on the substrate, in which the semiconductor layer is formed by alternately laminating a well layer and a barrier layer and at least the barrier layer in those layers contains magnetic ions; and electrodes to apply an electric field to the semiconductor layer. A light which was polarized in a predetermined direction is input to the semiconductor layer. A magnetic field is applied to the semiconductor layer. An electric field is applied to the semiconductor layer by the electrodes. The light which was transmitted in the semiconductor layer is extracted. A degree of leakage of a wave function of the carrier in the well layer into the barrier layer changes. An effective magnetic field which a carrier spin feels changes by an exchange interaction between the carrier spin and a magnetic moment associated with the magnetic ions. Thus, a degree of magnetooptic effect which is given to the transmission light changes. The degree of manetooptic effect can be controlled by the applied electric field. The magnetooptic device is preferably used as an optical modulator or an optical isolator in the field of optical communications or optical memories.