The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 15, 1992
Filed:
Sep. 06, 1991
Satoshi Hirose, Itami, JP;
Mitsubishi Denki Kabushiki Kaisha, Tokyo, JP;
Abstract
A charge transfer device includes a signal charge transfer region including a first conductivity type first low dopant concentration semiconductor region on which transfer electrodes are disposed via an insulating film, a charge storage region including a first conductivity type second low dopant concentration semiconductor region connected to the first low dopant concentration semiconductor region, a second conductivity type semiconductor region disposed on the charge storage region, a first conductivity type high dopant concentration semiconductor region disposed at the surface of and spaced from the first conductivity type second low dopant concentration semiconductor region at a region opposite the first conductivity type first low dopant concentration semiconductor region, and a detector for detecting the quantity of signal charges stored in the charge storage region from the resistance value between two points in a portion of said second conductivity type semiconductor region. The charge storage region is completely depleted during the resetting operation, reset noise is eliminated, and S/N ratio is enhanced.