The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 15, 1992
Filed:
Mar. 05, 1991
University of Southern California, Los Angeles, CA (US);
Abstract
Certain crystalline organic semiconductor compounds, such as 3,4,9,10-perylenetetracarboxylic dianhydride (PTCDA), when deposited by an ultrahigh vacuum process of organic molecular beam deposition, form highly ordered 'quasi-epitaxial' films (32). Due to asymmetries in the molecular crystal structure of such compounds, the ordering of the films results in giant asymmetries in their dielectric properties. Such large dielectric asymmetries permit the construction of a variety of devices, including optical isolators (38), optically isolated lasers (48), optical isolated optical amplifiers (64), polarization-selective photodiodes (76), and metal-organic-inorganic semiconductor-metal detectors, among others.