The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 15, 1992
Filed:
Jan. 04, 1991
Applicant:
Inventors:
Takeo Muragishi, Hyogo, JP;
Eiichi Arima, Hyogo, JP;
Assignee:
Mitsubishi Denki Kabushiki Kaisha, Tokyo, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
257315 ; 365185 ; 257324 ; 257344 ; 257411 ;
Abstract
A non-volatile semiconductor memory device includes a memory transistor of a dual gate structure in a memory cell adapted for storing memory information. The transistor includes a floating gate and a control gate insulated by an interlayer insulating layer having a laminated structure of silicon oxide and silicon nitride films. The nitride film of the interlayer insulating layer has a visor-like portion protruding from and overlying a portion of the lateral surface of the floating gate. The transistor further is comprised of impurity regions in a so-called LDD structure.