The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 15, 1992
Filed:
Nov. 21, 1989
Applicant:
Inventors:
Naohiro Matsukawa, Kamakura, JP;
Yoshihisa Mizutani, Tokyo, JP;
Assignee:
Kabushiki Kaisha Toshiba, Kawasaki, JP;
Primary Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ; H01L / ;
U.S. Cl.
CPC ...
257316 ; 257532 ;
Abstract
A nonvolatile semiconductor memory device has n.sup.+ -type source and drain regions formed in the surface of a p-type semiconductor substrate, a floating gate formed above and insulated from a channel region provided between the source and drain regions, and a control gate formed above and insulated from the floating gate. The memory device further has a capacitor provided between the control gate and drain region.